SOI Circuit Design Concepts

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Éditeur :

Kluwer Academic Publishers


Paru le : 2000

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Description

Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood. This text first introduces the student or practising engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches is also described.
Pages
n.c
Collection
n.c
Parution
2000
Marque
Kluwer Academic Publishers
EAN papier
0306470136
EAN PDF
0306470136

Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
10
Taille du fichier
1445 Ko
Prix
143,69 €

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